Measurement of temperature dependencies of real and imaginary parts of the complex index of refraction of monocrystalline of silicon in the range of absorption edge

Alexander N. Magunov

doi:10.1117/12.213175

23 June 1995 Measurement of temperature dependencies of real and imaginary parts of the complex index of refraction of monocrystalline of silicon in the range of absorption edge

Alexander N. Magunov

Author Affiliations +

Proceedings Volume 2208, Refractometry; (1995) https://doi.org/10.1117/12.213175
Event: Refractometry: International Conference, 1994, Warsaw, Poland

Abstract

Optical constants of monocrystalline silicon are experimentally determined in the range from 293 K to 700 K using laser lines of 1.06 micrometers and 1.15 micrometers . The quantitative description of spectral and temperature dependencies of the absorption coefficient for indirect optical transitions is given as well as the empirical approximation of spectral and temperature dependencies of refractive index.

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Alexander N. Magunov "Measurement of temperature dependencies of real and imaginary parts of the complex index of refraction of monocrystalline of silicon in the range of absorption edge", Proc. SPIE 2208, Refractometry, (23 June 1995); https://doi.org/10.1117/12.213175

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