19 August 1994 Amplification of submillimeter radiation due to optical transitions between shallow acceptor states in semiconductors
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Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.183061
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
Theoretical proposals concerning submillimeter and far-infrared activity based on shallow acceptors states optical transitions in p-Ge and p-Si semiconductors are discussed. Preliminary experimental investigations will be presented.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valery N. Shastin, Valery N. Shastin, Andrei V. Muravjov, Andrei V. Muravjov, Ekaterina E. Orlova, Ekaterina E. Orlova, Sergei G. Pavlov, Sergei G. Pavlov, "Amplification of submillimeter radiation due to optical transitions between shallow acceptor states in semiconductors", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.183061; https://doi.org/10.1117/12.183061
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