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19 August 1994 Electro-optic power control of a millimeter wave Gaussian beam
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Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.182983
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
The use of a molecular beam epitaxy (MBE) engineered III-V semiconductor to quasioptically modulate a millimeter wave Gaussian beam is presented. The effect is based on the generation of excess carrier densities under photonic excitation of the material. Low light power densities are required due to the high recombination lifetime achieved in the used material. A modulation depth of more than 15 dB and a dark insertion loss of less that 0.5 dB has been obtained at 100 GHz.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guillermo F. Delgado and Joakhim F. Johansson "Electro-optic power control of a millimeter wave Gaussian beam", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); https://doi.org/10.1117/12.182983
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