19 August 1994 High-electron-mobility transistors (HEMTs) for millimeter wave applications
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Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.182990
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Using advanced epitaxy and process technologies, we fabricated a planar-doped AlGaAs/GaAs HEMT with gates 0.1 micrometers long. At 12 GHz, the device had a noise figure (NF), including the package loss, of 0.50 dB with an associated gain (Gas) of 13.0 dB. This is, to our knowledge, the lowest NF at 12 GHz reported for AlGaAs/GaAs HEMTs. For GaAs-based InGaP/InGaAs HEMTs, we obtained a NF, including the package loss, of 0.41 dB at 12 GHz with a Gas of 13.0 dB, and a NF of 1.2 dB at 50 GHz with a Gas of 5.8 dB. These high-performance GaAs- based HEMTs are widely used at microwave frequencies. Millimeter wave applications also require low-cost high-performance HEMTs.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun-Ichiro Nikaido, Jun-Ichiro Nikaido, Soshi Omura, Soshi Omura, Junji Saito, Junji Saito, } "High-electron-mobility transistors (HEMTs) for millimeter wave applications", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.182990; https://doi.org/10.1117/12.182990

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