19 August 1994 Improved conductivity measurement of semiconductor epitaxial layers by means of the contactless microwave method
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Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.183059
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
Measurements and calculations of the scattering-characteristics of stratified lossy dielectric blocks completely filling a waveguide cross section are presented. The method is used for contactless conductivity measurements of MBE-grown II-VI semiconductor layers.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Boege, P. Boege, H. Schaefer, H. Schaefer, Shan-jia Xu, Shan-jia Xu, Xinzhang Wu, Xinzhang Wu, S. Einfeldt, S. Einfeldt, Charles R. Becker, Charles R. Becker, D. Hommel, D. Hommel, Reinhart Geick, Reinhart Geick, } "Improved conductivity measurement of semiconductor epitaxial layers by means of the contactless microwave method", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.183059; https://doi.org/10.1117/12.183059
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