19 August 1994 Laser generation mechanism of submillimeter range electromagnetic oscillations on p-n junction
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Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.183018
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
The longitudinal oscillation in an inhomogeneous (p- and n-regions) semiconductor plasma of a p-n junction have been investigated theoretically. It is shown that in a forward biased p-n junction the instability of oscillations can be arised due to the stimulated coupled plasmon emission by injected electrons. The condition on the parameters of a p-n junction and on external circuit, which lead to the generation of submillimeter range oscillations (coupled plasmons), have been formulated.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir M. Yakovenko, "Laser generation mechanism of submillimeter range electromagnetic oscillations on p-n junction", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.183018; https://doi.org/10.1117/12.183018
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