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19 August 1994 Low compensation impurity band photoconductors
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Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994)
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Low compensation thin layer of antimony doped silicon impurity band photoconductors doped at the level 1017 - 1018 cm-3 are evaluated in moderate background photon flux in the range of 1012 s-1 with the goal to approach photon noise limitation operation in spectral ranges near 300 cm-1. Blocked impurity band photodetectors based on the same active layer geometry and thickness than the photoconductors were also implemented and measured. Spectral features including cut off wavenumbers specific to impurity band effects are investigated as a function of electric field and temperature. Spectroscopic evidence for a giant gain mechanism for photoelectrons excited from residual impurities in the blocking layer of BIB structure is found. Figures of merit of both IB and BIB elements were measured and physical mechanisms underlying the limitation of their performances are outlined.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Pasquier, G. Sirmain, Claude Meny, A. G. Murray, Matthew J. Griffin, Peter A. R. Ade, L. Essaleh, J. Galibert, and Jean Leotin "Low compensation impurity band photoconductors", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.183058;

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