19 August 1994 Recent experimental results from GaAs TUNNETT diodes above 100 GHz
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Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.183021
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
A well established selective etching technology for GaAs IMPATT diodes was employed to fabricate GaAs TUNNETT diodes on diamond heat sinks. The improved heat dissipation led to significantly higher dc to RF conversion efficiencies and doubled the available RF output power of diodes on diamond heat sinks compared to diodes from the same MBE-grown material on integral heat sinks. An RF output power of more than 80 mW with a corresponding dc to RF conversion efficiency of 5.25% was measured at 106.9 GHz. To the authors' knowledge, this is the first successful demonstration of GaAs TUNNETT diodes on diamond heat sinks, and the dc to RF conversion efficiencies and RF power levels are the highest reported to date from any single device made of group III-V materials (GaAs, InP, etc.) at this frequency. A free-running TUNNETT diode oscillator at 107.7 GHz showed an excellent phase noise of less than -94 dBc/Hz, measured at a frequency off-carrier of 500 kHz and an RF power of 40 mW. Phase-locking of TUNNETT diode oscillators has been demonstrated in a setup with a EIP 578 frequency counter and external down-conversion.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heribert Eisele, Heribert Eisele, George I. Haddad, George I. Haddad, } "Recent experimental results from GaAs TUNNETT diodes above 100 GHz", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.183021; https://doi.org/10.1117/12.183021


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