19 August 1994 Theory of the local oscillations near point, linear, and plane defects in semiconductors
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Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994) https://doi.org/10.1117/12.183063
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
The theory of the local optical oscillations near the defects of different types (point, linear, and plane) in semiconductors (SC) with a ionic crystal lattice is built. In the optical frequency range the transverse local oscillations (LO) exist in the crystal with a light defect and the longitudinal LO exist in the crystal with a heavy defect. The conduction electrons don't take part in forming of the frequencies of the LO, but influence their field structure essentially owing to the Coulomb interactions of the electrons with the lattice ions and the defect. Because of the Coulomb's screening of the defect by conduction electrons, the space about the defect divides into two regions: the near zone (r << rD, rD is the Debye's radius of screening) and the distant zone (r >> rD). In the near zone the coordinate dependencies of the LO amplitudes have the same form as in the ionic dielectrical crystals. In the distant zone the LO amplitudes decrease exponentially at the macroscopic distances which have scales of the Debye's radius rD or the length of the transverse electromagnetic waves in the SC media.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. G. Bass, Valentina L. Falko, Svetlana I. Khankina, "Theory of the local oscillations near point, linear, and plane defects in semiconductors", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994); doi: 10.1117/12.183063; https://doi.org/10.1117/12.183063
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