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19 August 1994 V-band monolithic integrated circuits for personal communication terminals
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Proceedings Volume 2211, Millimeter and Submillimeter Waves; (1994)
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
A single-stage high gain wide band amplifier and an MMIC oscillator at V-band have been successfully fabricated based on a 0.15 micrometers T-shaped gate AlGaAs/InGaAs/AlGaAs heterojunction FET (HJFET) technology. The MMIC amplifier exhibits 7.2 dB +/- 1.0 dB gain over 49 approximately equals 61 GHz band and 15.3 dBm output power at 57.9 GHz. The MMIC oscillator shows 51 GHz oscillation with 2.8 dBm output power. These MMICs are promising for realizing compact personal communication terminals.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaki Funabashi, K. Ohata, K. Onda, Takashi Inoue, K. Hosoya, and M. Kuzuhara "V-band monolithic integrated circuits for personal communication terminals", Proc. SPIE 2211, Millimeter and Submillimeter Waves, (19 August 1994);

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