Low-voltage, high-bandwidth optical modulation utilizing enhanced electrorefractive effects in shaped quantum wells

W. Batty; D. W.E. Allsopp

doi:10.1117/12.185100

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25 August 1994 Low-voltage, high-bandwidth optical modulation utilizing enhanced electrorefractive effects in shaped quantum wells

W. Batty; D. W.E. Allsopp

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Proceedings Volume 2212, Linear and Nonlinear Integrated Optics; (1994) https://doi.org/10.1117/12.185100
Event: Integrated Optoelectronics '94, 1994, Lindau, Germany

Abstract

It is demonstrated computationally that enhanced electrorefractive effects can be obtained by engineering the shape of semiconductor quantum wells. This demands either the generation of a unipolar differential absorption spectrum on application of an electric field, or exploitation of the observed quadratic field dependence of refractive index changes in square wells. Two methods of tailoring quantum well profiles are employed: multi-layered quantum well growth and strategic (delta) -doping. Both approaches are shown to be sufficiently robust to be achievable within the limits of current growth technology. The enhanced electrorefractive effects will be beneficial to the operation of the full range of optical modulator devices from electrorefractive asymmetric Fabry-Perot modulators for optical interconnects and optical processing, to ultra-high bandwidth interferometric travelling-wave modulators for microwave optoelectronics.

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W. Batty and D. W.E. Allsopp "Low-voltage, high-bandwidth optical modulation utilizing enhanced electrorefractive effects in shaped quantum wells", Proc. SPIE 2212, Linear and Nonlinear Integrated Optics, (25 August 1994); https://doi.org/10.1117/12.185100

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