28 July 1994 Device integration on indium phosphide for photonic switching applications
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The development of broadband telecommunication networks has led to a growing interest in photonic devices so that monolithic integration on InP material has been intensively studied to get miniaturization, high complexity, advanced functions and consequently cost reduction. We illustrate in this paper the continuous progress that has been done to make technology mature enough for integration through the fabrication of two types of Photonic Integrated Circuits: a 4 X 4 switch matrix and a multifunctional access node switch.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Luc Peyre, Jean-Luc Peyre, E. Boucherez, E. Boucherez, A. Goutelle, A. Goutelle, B. Martin, B. Martin, Jean-Francois Vinchant, Jean-Francois Vinchant, Monique Renaud, Monique Renaud, } "Device integration on indium phosphide for photonic switching applications", Proc. SPIE 2213, Nanofabrication Technologies and Device Integration, (28 July 1994); doi: 10.1117/12.180965; https://doi.org/10.1117/12.180965

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