8 June 1994 Survivability of quantum well optoelectronic devices for space applications
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Abstract
Evaluation of threshold-shift damage factors versus non-ionizing energy deposition for GaAs-based, quantum-well, laser diodes and light-emitting diodes demonstrates that they obey the relation between damage factors and non-ionizing energy loss established for GaAs-based electronic devices.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruce D. Evans, Bruce D. Evans, } "Survivability of quantum well optoelectronic devices for space applications", Proc. SPIE 2215, Photonics for Space Environments II, (8 June 1994); doi: 10.1117/12.177643; https://doi.org/10.1117/12.177643
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