8 June 1994 Survivability of quantum well optoelectronic devices for space applications
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Abstract
Evaluation of threshold-shift damage factors versus non-ionizing energy deposition for GaAs-based, quantum-well, laser diodes and light-emitting diodes demonstrates that they obey the relation between damage factors and non-ionizing energy loss established for GaAs-based electronic devices.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruce D. Evans, "Survivability of quantum well optoelectronic devices for space applications", Proc. SPIE 2215, Photonics for Space Environments II, (8 June 1994); doi: 10.1117/12.177643; https://doi.org/10.1117/12.177643
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