10 June 1994 High-resolution AC thin-film electroluminescence using active matrix on Si substrate
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Abstract
Active matrix electroluminescent (AMEL) devices are fabricated using circuitry built on the thin-film single crystal silicon on insulator wafers. A 128 X 128 matrix with 24micrometers pixel pitch (1000 lines/inch) is fabricated with higher than 80% fill factor showing initial brightness of above 500fL and high contrast ratios (>100:1). These devices demonstrated the successful combination of active circuitry fabricated using conventional IC processing with standard electroluminescent processing. This AMEL approach provides the potential for head-mounted displays with a very small profile and high efficiency.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ron Khormaei, Ron Khormaei, Stephen C. Thayer, Stephen C. Thayer, Ken Ping, Ken Ping, Christopher N. King, Christopher N. King, Gary M. Dolny, Gary M. Dolny, Alfred C. Ipri, Alfred C. Ipri, Fu-Lung Hsueh, Fu-Lung Hsueh, David Furst, David Furst, Roger G. Stewart, Roger G. Stewart, Thomas Keyser, Thomas Keyser, Gerry Becker, Gerry Becker, Dan R. Kagey, Dan R. Kagey, Mark B. Spitzer, Mark B. Spitzer, M. W. Batty, M. W. Batty, } "High-resolution AC thin-film electroluminescence using active matrix on Si substrate", Proc. SPIE 2218, Helmet- and Head-Mounted Displays and Symbology Design Requirements, (10 June 1994); doi: 10.1117/12.177378; https://doi.org/10.1117/12.177378
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