10 June 1994 High-resolution AC thin-film electroluminescence using active matrix on Si substrate
Author Affiliations +
Abstract
Active matrix electroluminescent (AMEL) devices are fabricated using circuitry built on the thin-film single crystal silicon on insulator wafers. A 128 X 128 matrix with 24micrometers pixel pitch (1000 lines/inch) is fabricated with higher than 80% fill factor showing initial brightness of above 500fL and high contrast ratios (>100:1). These devices demonstrated the successful combination of active circuitry fabricated using conventional IC processing with standard electroluminescent processing. This AMEL approach provides the potential for head-mounted displays with a very small profile and high efficiency.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ron Khormaei, Ron Khormaei, Stephen C. Thayer, Stephen C. Thayer, Ken Ping, Ken Ping, Christopher N. King, Christopher N. King, Gary M. Dolny, Gary M. Dolny, Alfred C. Ipri, Alfred C. Ipri, Fu-Lung Hsueh, Fu-Lung Hsueh, David Furst, David Furst, Roger G. Stewart, Roger G. Stewart, Thomas Keyser, Thomas Keyser, Gerry Becker, Gerry Becker, Dan R. Kagey, Dan R. Kagey, Mark B. Spitzer, Mark B. Spitzer, M. W. Batty, M. W. Batty, } "High-resolution AC thin-film electroluminescence using active matrix on Si substrate", Proc. SPIE 2218, Helmet- and Head-Mounted Displays and Symbology Design Requirements, (10 June 1994); doi: 10.1117/12.177378; https://doi.org/10.1117/12.177378
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

AFM and 2 D GIXD studies on pentacene thin films...
Proceedings of SPIE (September 20 2005)
Low-frequency noise in porous Si LED
Proceedings of SPIE (May 11 2003)
Integration of thin film electronics and MEMS
Proceedings of SPIE (May 19 1996)
Reciprocating silicon microtribometer
Proceedings of SPIE (January 15 2003)

Back to Top