15 June 1994 Improved vanadium-dioxide-based infrared spatial light modulator
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Abstract
As was previously reported, a spatial light modulator (SLM) is being fabricated that exploits vanadium dioxide's (VO2) thermally induced transition from a semiconductive-to-metallic state. This transformation causes the film to change from a state of low to high reflectivity in the 3 - 12 micrometers region. Thermal control of the VO2 is provided by an array of p-n junction diodes, each diode constituting the center of a single `pixel' in the SLM. As power is applied to a diode, it generates heat, thereby providing an electrical means of controlling the reflective state of the VO2 film on its surface. The design of the SLM is driven by the need for a high optical contrast, large scale implementation, and high refresh rate. Unfortunately, these requirements are not conducive to each other, so compromises must be made. Optimizations of this design using either microchannel or chemical vapor deposition diamond heat sinks are reported. Both of these simulated designs attained pixel switching times in excess of 650 Hz.
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David W. Blodgett, Michael J. Elko, Philip J. McNally, "Improved vanadium-dioxide-based infrared spatial light modulator", Proc. SPIE 2223, Characterization and Propagation of Sources and Backgrounds, (15 June 1994); doi: 10.1117/12.177949; https://doi.org/10.1117/12.177949
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KEYWORDS
Spatial light modulators

Diodes

Infrared radiation

Reflectivity

Chemical vapor deposition

Diamond

Semiconductors

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