15 July 1994 High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition
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Abstract
The InSb metal oxide semiconductor field effect transistor (MOSFET) with three different channel lengths 5, 15, and 30 micrometers were fabricated successfully. The SiO2 prepared by photoenhanced chemical vapor deposition was used both as the gate insulator and the source/drain passivation layer to reduce the source/drain pn junction surface leakage current. The common sourch current voltage characteristics show a breakdown voltage exceeding 2 V indicating an excellent pn junction reverse characteristics. The capacitance-voltage and the transferred current versus gate voltage characteristics are discussed in detail to explain the geometry effect on the device performance.
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Biing-Der Liu, Biing-Der Liu, Si-Chen Lee, Si-Chen Lee, Kou-Chen Liu, Kou-Chen Liu, Tai Ping Sun, Tai Ping Sun, Sheng-Jehn Yang, Sheng-Jehn Yang, } "High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition", Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179699; https://doi.org/10.1117/12.179699
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