High-performance near-room-temperature 2-12 um photodetectors

Jozef Piotrowski

doi:10.1117/12.179720

15 July 1994 High-performance near-room-temperature 2-12 um photodetectors

Jozef Piotrowski

Proceedings Volume 2225, Infrared Detectors and Focal Plane Arrays III; (1994) https://doi.org/10.1117/12.179720
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

The ultimate signal-to-noise performance of the semiconductor photodetector is limited by the statistical fluctuations of the thermal generation and recombination rates in the semiconductor. Various ways to improve the performance of photodetectors operated at near room temperature including: optimized gap/doping profile, reduced volume of the device, and the use of non- equilibrium depletion of semiconductor have been proposed. Practical 2 to 12 micrometers devices with improved performance are reported.

Citation Download Citation

Jozef Piotrowski "High-performance near-room-temperature 2-12 um photodetectors", Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); https://doi.org/10.1117/12.179720

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