15 July 1994 High-performance near-room-temperature 2-12 um photodetectors
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Abstract
The ultimate signal-to-noise performance of the semiconductor photodetector is limited by the statistical fluctuations of the thermal generation and recombination rates in the semiconductor. Various ways to improve the performance of photodetectors operated at near room temperature including: optimized gap/doping profile, reduced volume of the device, and the use of non- equilibrium depletion of semiconductor have been proposed. Practical 2 to 12 micrometers devices with improved performance are reported.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jozef Piotrowski, "High-performance near-room-temperature 2-12 um photodetectors", Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179720; https://doi.org/10.1117/12.179720
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KEYWORDS
Photodetectors

Semiconductors

Signal to noise ratio

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