15 July 1994 Normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well infrared photodetector with background limited performance at 77 K
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Abstract
An ultra-low dark current normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well IR photodetector (PSL-QWIP) grown on semi-insulating (100) InP substrate by MBE technique has been demonstrated for the first time. This PSL-QWIP shows a background limited performance (BLIP) for TBLIP* for this PSL-QWIP were found to be 7 X 10-8A/cm2 and 5.9 X 1010 cm - (root)Hz/W, respectively, at (lambda) p equals 8.1 micrometers , Vb equals -2V, and T equals 77 K.
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Sheng S. Li, Yanhua H. Wang, Jerome T. Chu, Pin Ho, "Normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well infrared photodetector with background limited performance at 77 K", Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179692; https://doi.org/10.1117/12.179692
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