Normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well infrared photodetector with background limited performance at 77 K

Sheng S. Li; Yanhua H. Wang; Jerome T. Chu; Pin Ho

doi:10.1117/12.179692

15 July 1994 Normal incidence p-type strained-layer In_0.3Ga_0.7As/In_0.52Al_0.48As quantum well infrared photodetector with background limited performance at 77 K

Sheng S. Li, Yanhua H. Wang, Jerome T. Chu, Pin Ho

Author Affiliations +

Proceedings Volume 2225, Infrared Detectors and Focal Plane Arrays III; (1994) https://doi.org/10.1117/12.179692
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

An ultra-low dark current normal incidence p-type strained-layer In_0.3Ga_0.7As/In_0.52Al_0.48As quantum well IR photodetector (PSL-QWIP) grown on semi-insulating (100) InP substrate by MBE technique has been demonstrated for the first time. This PSL-QWIP shows a background limited performance (BLIP) for TBLIP^* for this PSL-QWIP were found to be 7 X 10^-8A/cm² and 5.9 X 10¹⁰ cm - (root)Hz/W, respectively, at (lambda) _p equals 8.1 micrometers , V_b equals -2V, and T equals 77 K.

Citation Download Citation

Sheng S. Li, Yanhua H. Wang, Jerome T. Chu, and Pin Ho "Normal incidence p-type strained-layer In_0.3Ga_0.7As/In_0.52Al_0.48As quantum well infrared photodetector with background limited performance at 77 K", Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); https://doi.org/10.1117/12.179692

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