15 July 1994 Performance of generation III 640 x 480 PtSi MOS array
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Abstract
The design and performance of a third generation 640(H) X 480(V) PtSi focal plane array is presented. The 3 to 5 micron MWIR focal plane array supports interlaced, progressive scan, and subframe readout under control of on-chip digital decoders. The new design utilizes 1.25 micrometers design rules to achieve a 50% fill-factor, a noise equivalent delta temperature of <0.07 C (f/1.5, 30 Hz, 300 K), and a saturation level >1.5 X 106e. The power dissipation is less than 110 mW.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas S. Villani, Thomas S. Villani, Benjamin J. Esposito, Benjamin J. Esposito, T. J. Pletcher, T. J. Pletcher, Donald J. Sauer, Donald J. Sauer, Peter A. Levine, Peter A. Levine, Frank V. Shallcross, Frank V. Shallcross, Grazyna M. Meray, Grazyna M. Meray, John R. Tower, John R. Tower, "Performance of generation III 640 x 480 PtSi MOS array", Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179685; https://doi.org/10.1117/12.179685
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