15 July 1994 Three-band 1.0-2.5 um near-infrared InGaAs detector array
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Abstract
A novel three wavelength InGaAs focal plane array pixel element for detection at wavelengths from 1.0 to 2.5 micrometers , where each of three wavelength sensitive detectors are individually addressable is described. This device consists of successively smaller bandgap layers in InxGa1-xAs (x>=0.53), separated by compositionally graded layers of InAsyP1-y to decrease defects induced by lattice mismatch strain with the InP substrate and provide high-bandgap passivation. The various layers were selectively removed so that p-n junctions with different wavelength response could be formed. The three detectors have quantum efficiencies between 55 and 95% for front illumination and 15 and 60% for back illumination, and dark currents from 0.01 to 10 mA/cm2.
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Gregory H. Olsen, Michael J. Lange, Marshall J. Cohen, Dong-Su Kim, Stephen R. Forrest, "Three-band 1.0-2.5 um near-infrared InGaAs detector array", Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179693; https://doi.org/10.1117/12.179693
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