15 July 1994 Three-band 1.0-2.5 um near-infrared InGaAs detector array
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A novel three wavelength InGaAs focal plane array pixel element for detection at wavelengths from 1.0 to 2.5 micrometers , where each of three wavelength sensitive detectors are individually addressable is described. This device consists of successively smaller bandgap layers in InxGa1-xAs (x>=0.53), separated by compositionally graded layers of InAsyP1-y to decrease defects induced by lattice mismatch strain with the InP substrate and provide high-bandgap passivation. The various layers were selectively removed so that p-n junctions with different wavelength response could be formed. The three detectors have quantum efficiencies between 55 and 95% for front illumination and 15 and 60% for back illumination, and dark currents from 0.01 to 10 mA/cm2.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory H. Olsen, Gregory H. Olsen, Michael J. Lange, Michael J. Lange, Marshall J. Cohen, Marshall J. Cohen, Dong-Su Kim, Dong-Su Kim, Stephen R. Forrest, Stephen R. Forrest, } "Three-band 1.0-2.5 um near-infrared InGaAs detector array", Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179693; https://doi.org/10.1117/12.179693

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