23 June 1994 40K cryogenic rad-hard CMOS readout multiplexer fabrication process
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Abstract
Cryogenic signal processing and A/D conversion for the IR imaging and high energy physics experiment applications place severe demands on the silicon process involved, particularly in ionizing radiation environments. This paper describes a process specifically optimized for operation in the 40 K - 77 K temperature range in a total dose environment. Trade-offs of hardness, supply voltage and hot electron vulnerability are discussed and preliminary device- level results are shown.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Damian Carver, Damian Carver, John T. Gasner, John T. Gasner, Terry M. Pierce, Terry M. Pierce, N. van Vonno, N. van Vonno, M. Coole, M. Coole, Allen W. Hairston, Allen W. Hairston, Randy Wilder, Randy Wilder, Frank B. Jaworski, Frank B. Jaworski, } "40K cryogenic rad-hard CMOS readout multiplexer fabrication process", Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); doi: 10.1117/12.178471; https://doi.org/10.1117/12.178471
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