23 June 1994 Circuit design approaches for improved radiation hardness
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Abstract
The use of a multiple dielectric gate insulator, and the addition of a gate insulator extension and guard-bars to the NMOS transistors, has resulted in a significant increase in total-dose ionizing radiation resistance for CMOS IR readout multiplexer circuits operating at cryogenic temperatures. This paper describes the implementation of these modifications, and also some observed anomalous transistor offset voltages that were apparently due to charges trapped in the multiple dielectric gate insulator during the circuit fabrication process.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William J. Mandl, William J. Mandl, Carl M. Rutschow, Carl M. Rutschow, } "Circuit design approaches for improved radiation hardness", Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); doi: 10.1117/12.178477; https://doi.org/10.1117/12.178477
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