23 June 1994 One-micrometer, radiation-hardened complementary metal oxide semiconductor for cryogenic analog applications
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Results are presented of a process-development effort to achieve a 1-Mrad silicon (Si) radiation-hardening capability at temperatures down to 40 K, using Texas Instruments high volume, 1-micrometer commercial process. The one-micrometer process was characterized at 77 K and 40 K: radiation effects on the baseline SiO2 gate dielectric and N-channel field effect transistor edges were observed, as were freeze-out and hot-carrier effects of the lightly doped drain implants. These freeze-out phenomena were confirmed, using SUPREM, MINIMOS, and MEDICI. The simulated data compared favorably with measured results. Simulations were run, using various implant doses and profiles to eliminate the freeze-out and hot-carrier effects in the new process. Devices having these simulated profiles were processed, and the results are presented.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Imelda Groves, Imelda Groves, George A. Brown, George A. Brown, G. Pollack, G. Pollack, K. Green, K. Green, Larry C. Dawson, Larry C. Dawson, Arvind I. D'Souza, Arvind I. D'Souza, Chih-Chia Lin, Chih-Chia Lin, M. Song, M. Song, C. Hwang, C. Hwang, Jason C.S. Woo, Jason C.S. Woo, Kenneth P. MacWilliams, Kenneth P. MacWilliams, "One-micrometer, radiation-hardened complementary metal oxide semiconductor for cryogenic analog applications", Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); doi: 10.1117/12.178494; https://doi.org/10.1117/12.178494

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