PROCEEDINGS VOLUME 2228
SPIE'S INTERNATIONAL SYMPOSIUM ON OPTICAL ENGINEERING AND PHOTONICS IN AEROSPACE SENSING | 4-8 APRIL 1994
Producibility of II-VI Materials and Devices
IN THIS VOLUME

5 Sessions, 36 Papers, 0 Presentations
Materials I  (8)
Materials II  (5)
Detectors  (8)
SPIE'S INTERNATIONAL SYMPOSIUM ON OPTICAL ENGINEERING AND PHOTONICS IN AEROSPACE SENSING
4-8 April 1994
Orlando, FL, United States
Materials I
Proc. SPIE 2228, Vertical Bridgman growth of large-diameter (Cd,Zn)Te crystals, 0000 (13 July 1994); https://doi.org/10.1117/12.179659
Proc. SPIE 2228, Producibility improvements suggested by a validated process model of seeded CdZnTe vertical Bridgman growth, 0000 (13 July 1994); https://doi.org/10.1117/12.179670
Proc. SPIE 2228, Growth of large-area high-quality CdZnTe substrates by the computer-controlled vertical Bridgman method, 0000 (13 July 1994); https://doi.org/10.1117/12.179680
Proc. SPIE 2228, Substrate-quality ternary III-V single crystals for II-VI device applications: growth and characterization, 0000 (13 July 1994); https://doi.org/10.1117/12.179681
Proc. SPIE 2228, Self-aligned molecular beam epitaxy of CdZnTe for IR focal plane arrays, 0000 (13 July 1994); https://doi.org/10.1117/12.179682
Proc. SPIE 2228, Direct growth of single-domain and twin-free CdTe(111)B on vicinal Si(001) by molecular beam epitaxy, 0000 (13 July 1994); https://doi.org/10.1117/12.179683
Materials II
Proc. SPIE 2228, Highly producible HgCdTe molecular beam epitaxy growth technique using radiational substrate heating, 0000 (13 July 1994); https://doi.org/10.1117/12.179684
Proc. SPIE 2228, Iodine doping and MOCVD in-situ growth of HgCdTe p-on-n heterojunctions, 0000 (13 July 1994); https://doi.org/10.1117/12.179649
Proc. SPIE 2228, Cation impurity interactions in Hg1-xCdxTe, 0000 (13 July 1994); https://doi.org/10.1117/12.179650
Proc. SPIE 2228, Production of low-cost large-area CdZnTe films by metalorganic chemical vapor deposition (MOCVD) on GaAs and Si substrates, 0000 (13 July 1994); https://doi.org/10.1117/12.179651
Materials III
Proc. SPIE 2228, Structural and interfacial studies on Zn1-xMgxSySe1-y/ZnSe buffer layer/GaAs heterostructures, 0000 (13 July 1994); https://doi.org/10.1117/12.179652
Proc. SPIE 2228, Transmission electrom microscopy (TEM) defect studies of molecular beam epitaxy (MBE) grown ZnSxSe1-x/GaAs interface, 0000 (13 July 1994); https://doi.org/10.1117/12.179653
Proc. SPIE 2228, High-quality ZnSe on GaAs grown by metalorganic chemical vapor deposition (MOCVD) using diethylzinc (DEZn) and diethyselenide (DESe), 0000 (13 July 1994); https://doi.org/10.1117/12.179654
Proc. SPIE 2228, Photoluminescence and Raman scattering characterization of As-grown and implanted bulk ZnSe crystals, 0000 (13 July 1994); https://doi.org/10.1117/12.179655
Proc. SPIE 2228, Principal strain tensor elements for (h,h,k)-oriented cubic crystals: an application to ZnSe-based heterostructures, 0000 (13 July 1994); https://doi.org/10.1117/12.179656
Proc. SPIE 2228, X-ray photoelectron spectroscopy (XPS) studies on Zn/Cd selenide thin films grown by electron-beam deposition, 0000 (13 July 1994); https://doi.org/10.1117/12.179657
Proc. SPIE 2228, Monograin A2B6 powders, 0000 (13 July 1994); https://doi.org/10.1117/12.179658
Detectors
Proc. SPIE 2228, Commercialization of liquid phase epitaxy (LPE) HgCdTe material, detectors, and arrays, 0000 (13 July 1994); https://doi.org/10.1117/12.179660
Proc. SPIE 2228, Ultrafast molecular beam epitaxy (MBE) CdTe photoconductor array for synchrotron radiation, 0000 (13 July 1994); https://doi.org/10.1117/12.179661
Proc. SPIE 2228, Molecular beam epitaxy (MBE) HgCdTe flexible growth technology for the manufacturing of infrared photovoltaic detectors, 0000 (13 July 1994); https://doi.org/10.1117/12.179662
Proc. SPIE 2228, Effect of subgrain boundaries on the producibility of detector arrays fabricated on traveling heater method (THM) materials, 0000 (13 July 1994); https://doi.org/10.1117/12.179663
Proc. SPIE 2228, Producibility of Vertically Integrated Photodiode (VIP)tm scanning focal plane arrays, 0000 (13 July 1994); https://doi.org/10.1117/12.179664
Proc. SPIE 2228, Mercury cadmium telluride (MCT) TDI arrays producibility, 0000 (13 July 1994); https://doi.org/10.1117/12.179665
Proc. SPIE 2228, Behavior of Sofradir detector dewar assembly under operational conditions, 0000 (13 July 1994); https://doi.org/10.1117/12.179666
Proc. SPIE 2228, Electrical effects of subgrain boundaries, twins, dislocations, and Te precipitation on long-wavelength IR HgCdTe photodiode arrays, 0000 (13 July 1994); https://doi.org/10.1117/12.179667
Materials II
Proc. SPIE 2228, Direct determination of level diagram in CdS by means of two-photon photoelectron spectroscopy, 0000 (13 July 1994); https://doi.org/10.1117/12.179668
Characterization
Proc. SPIE 2228, Automated radiometric cryoprobe of IR focal plane array wafers, 0000 (13 July 1994); https://doi.org/10.1117/12.179669
Proc. SPIE 2228, Large-area x-ray topographic screening of II-VI substrates and epilayers, 0000 (13 July 1994); https://doi.org/10.1117/12.179671
Proc. SPIE 2228, RIE control by optical emission endpoint detection in IR focal plane array production, 0000 (13 July 1994); https://doi.org/10.1117/12.179672
Proc. SPIE 2228, Magneto-optical characterization of HgCdTe thin films, 0000 (13 July 1994); https://doi.org/10.1117/12.179673
Proc. SPIE 2228, Wideband magneto-optical characterization of HgCdTe, 0000 (13 July 1994); https://doi.org/10.1117/12.179674
Proc. SPIE 2228, Spectroscopic ellipsometry as a real-time sensor for the fabrication of infrared photodiodes, 0000 (13 July 1994); https://doi.org/10.1117/12.179675
Proc. SPIE 2228, Nondestructive characterization of II-VI materials for infrared detection by scanned photoluminescence, 0000 (13 July 1994); https://doi.org/10.1117/12.179676
Materials I
Proc. SPIE 2228, Large-volume production of HgCdTe by dipping liquid phase epitaxy, 0000 (13 July 1994); https://doi.org/10.1117/12.179677
Proc. SPIE 2228, Scale-up of LPE processes for flexibility in manufacturing, 0000 (13 July 1994); https://doi.org/10.1117/12.179678
Characterization
Proc. SPIE 2228, Application of advanced sensors to the liquid phase epitaxy (LPE) growth of MCT, 0000 (13 July 1994); https://doi.org/10.1117/12.179679
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