13 July 1994 Application of advanced sensors to the liquid phase epitaxy (LPE) growth of MCT
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Liquid phase epitaxy (LPE) of (Hg,Cd)Te (MCT) is the technique of choice for the preparation of the materials used for high performance focal plane arrays. Its successful development requires the development of advanced sensors and process controls. We detail here progress on the application of four sensor technologies to the LPE process for growth of MCT layers from Te rich melts on CdZnTe substrates. These include: (1) electron beam microprobe/wavelength dispersive x-ray analysis (WDX) for the rapid measurement of film composition immediately after growth; (2) an RTD based precision temperature control system that controls the melt temperature to better than +/- 0.005 degree(s)C and the Hg reservoir temperature to better than +/- 0.020 degree(s)C; (3) UV/visible optical absorption spectroscopy for the determination of the Hg partial pressure over the melt; and (4) CCD imaging for the detection of the liquid temperature of the LPE growth solution. The impact of each of the sensors on process yield is discussed. The application of the CCD camera to Hg rich high pressure LPE growth is also briefly mentioned.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Glenn H. Westphal, Glenn H. Westphal, Luigi Colombo, Luigi Colombo, Jeff M. Anderson, Jeff M. Anderson, } "Application of advanced sensors to the liquid phase epitaxy (LPE) growth of MCT", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179679; https://doi.org/10.1117/12.179679


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