13 July 1994 Electrical effects of subgrain boundaries, twins, dislocations, and Te precipitation on long-wavelength IR HgCdTe photodiode arrays
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Abstract
HgCdTe crystals have a high density of intrinsic material defects generated either during the growth process itself or subsequent annealing steps. An understanding of the relationships between these material imperfections and the electrical performance of long-wavelength infrared (LWIR) HgCdTe photodiodes provides guidance in the choice of the growth technique and subsequent processing to minimize electrically detrimental defects. It also sets limits of material perfection required to achieve a specified performance level. Understandings of these relationships have been gained for subgrain boundaries, twins, dislocations, and Te precipitation in LWIR HgCdTe n-on-p photodiodes. Measurements of bias dependent dark current, responsivity, and noise as functions of defect density were performed on both arrays and test structures. This paper emphasizes the direct relationship between material defects and array performance. Wherever possible, the reader is referred to more detailed discussions. All the diodes reported in this study were planar, ion implanted structures using vacancy doped material. All reported measurements were taken at 77 K.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Scott List, John H. Tregilgas, Arthur M. Turner, Jeffrey D. Beck, John C. Ehmke, "Electrical effects of subgrain boundaries, twins, dislocations, and Te precipitation on long-wavelength IR HgCdTe photodiode arrays", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179667; https://doi.org/10.1117/12.179667
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