13 July 1994 Large-volume production of HgCdTe by dipping liquid phase epitaxy
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Production of large quantities of HgCdTe on CdZnTe has been accomplished by using the dipping liquid phase epitaxy (DLPE) process from tellurium-rich solutions. The dipping LPE process has been used to grow n-type indium doped HgCdTe, extrinsically doped and vacancy dominated p-type thick films for photoconductors, and the vertically integrated photodiodes, respectively. The composition is controlled through the on-line utilization of the HgCdTe phase diagram by a constituent weight tracking technique. The composition is controlled to a CdTe mole fraction of 0.225 +/- 0.002 over long periods of time, approximately 2 years. The LPE reactors were designed for high throughput, flexibility, and low material waste.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luigi Colombo, Luigi Colombo, Glenn H. Westphal, Glenn H. Westphal, "Large-volume production of HgCdTe by dipping liquid phase epitaxy", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179677; https://doi.org/10.1117/12.179677


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