13 July 1994 Nondestructive characterization of II-VI materials for infrared detection by scanned photoluminescence
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Abstract
In this paper we show that scanned photoluminescence can be a useful tool for characterization of III-V materials, particularly CdZnTe and HgCdTe alloys which are preferentially used in high performance infrared detectors. Spatially resolved integrated photoluminescence or spatial-spectral measurements are performed either at room temperature (test of CdZnTe substrates mainly) or at 77 K (test of HgCdTe epilayers detecting in the MWIR range). Firstly, correlation of the results achieved by this technique with those obtained for instance by x-ray topography or cathodoluminescence shows that it can be in the near future an efficient nondestructive and rapid method for IR substrate selection prior to HgCdTe epitaxy. Then results on Te-rich LPE and MBE HgCdTe layers are reported. They demonstrate that such a measuring technique can lead to process optimization and that an accurate material choice before processing can be envisaged according to the required detector performance. Finally, possible future applications of scanned photoluminescence for analysis of II-VI materials for IR detection are briefly proposed.
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Michel Wolny, T. Duluc, C. Linne, "Nondestructive characterization of II-VI materials for infrared detection by scanned photoluminescence", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179676; https://doi.org/10.1117/12.179676
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