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13 July 1994 Photoluminescence and Raman scattering characterization of As-grown and implanted bulk ZnSe crystals
Mulpuri V. Rao, Jaime A. Freitas Jr., Harry B. Dietrich, Alok K. Berry, J. Vellanki, Nibir K. Dhar
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Proceedings Volume 2228, Producibility of II-VI Materials and Devices; (1994) https://doi.org/10.1117/12.179655
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States
Abstract
As-grown bulk ZnSe material prepared by seeded physical vapor transport (SPVT) and melt- grown techniques, and N ion-implanted and heat-treated SPVT material are characterized by room-temperature Raman scattering and low-temperature photoluminescence techniques to evaluate the lattice perfection and to find the impurity and defect levels in the material. The measurements have indicated that the SPVT material is of better quality compared to the melt- grown material. The 200 keV/5 X 1013 cm-2 N ion-implantation and 650 degree(s)C/10 min anneal have resulted in high intensity deep energy level peaks in the photoluminescence spectra recorded on the SPVT samples.
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Mulpuri V. Rao, Jaime A. Freitas Jr., Harry B. Dietrich, Alok K. Berry, J. Vellanki, and Nibir K. Dhar "Photoluminescence and Raman scattering characterization of As-grown and implanted bulk ZnSe crystals", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179655
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KEYWORDS
Luminescence
Raman scattering
Crystals
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