13 July 1994 Principal strain tensor elements for (h,h,k)-oriented cubic crystals: an application to ZnSe-based heterostructures
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Abstract
Strain parameters of thin films are needed to numerically simulate the optical gain of light amplification for semiconductor devices. We report a complete quantitative treatment of the stress-strain relations for several common (h,h,k) orientations. We find that earlier reports that attributed the presence of tensile elastic strain to both thermal and lattice-mismatches gave strain estimates that were too low. Using our calculations, we present a model to explain the observed shifts in excitonic recombination energies that have been reported by many groups to date.
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Daniel Fang, Daniel Fang, D. N. Talwar, D. N. Talwar, Nancy C. Giles, Nancy C. Giles, } "Principal strain tensor elements for (h,h,k)-oriented cubic crystals: an application to ZnSe-based heterostructures", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179656; https://doi.org/10.1117/12.179656
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