13 July 1994 Reactive ion etching (RIE) control by optical emission endpoint detection in IR focal plane array production
Author Affiliations +
Abstract
The Microelectronics Manufacturing Science and Technology (MMST) program, a program mutually funded by ARPA, the U.S. Air Force, and Texas Instruments, was recently completed at TI and has had great impact on the fabrication of silicon-based devices. The MMST factory relied heavily on sensors to control processing and increase throughput and yield. It is our intent to utilize this MMST technology for infrared focal plane array (IRFPA) production. Aspects of our program to incorporate MMST technology into IRFPA production are discussed emphasizing the use of automated optical-emission-endpoint detection. Automated optical-emission-endpoint detection was successfully demonstrated on a RIE reactor. Optical emission was used to monitor as well as control our dielectric etch. The operation and application of optical emission endpoint detection for IRFPA fabrication are presented.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Glennis J. Orloff, "Reactive ion etching (RIE) control by optical emission endpoint detection in IR focal plane array production", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179672; https://doi.org/10.1117/12.179672
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Review of infrared focal plane arrays
Proceedings of SPIE (October 01 1990)
SOFRADIR IRFPA technology
Proceedings of SPIE (December 10 1992)
Current and future InSb infrared arrays for astronomy
Proceedings of SPIE (October 20 1993)
SOFRADIR MCT IRFPA: new developments
Proceedings of SPIE (September 08 1995)

Back to Top