13 July 1994 Structural and interfacial studies on Zn1-xMgxSySe1-y/ZnSe buffer layer/GaAs heterostructures
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(100) composition modulation as well as (101) and (101) tweed strain contrast were observed in Zn1-xMgxSySe1-y epitaxial films grown on ZnSe buffer layers. Surface buckling of the TEM plan-view specimens along the (110) direction is induced by the modulated structure in the Zn1-xMgxSySe1-y films. High quality Zn1-xMgxSySe1-y films were obtained by growing a ZnSe buffer layer on As-stabilized GaAs substrates with Zn treatment of the substrate prior to the growth of the film. In these samples, no vacancy-contained Ga2Se3 interfacial layer was found at the ZnSe/GaAs interface. Samples with rough ZnSe/GaAs interfaces contained a high density of Frank partial dislocations originating at the ZnSe/GaAs interface. The interface roughness is believed to result from an As-rich GaAs surface after the oxide desorption.
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Li-Hsin Kuo, Lourdes Salamanca-Riba, Bor-Jen Wu, Jim M. DePuydt, S. Guha, Greg Meis Haugen, "Structural and interfacial studies on Zn1-xMgxSySe1-y/ZnSe buffer layer/GaAs heterostructures", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179652; https://doi.org/10.1117/12.179652

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