Structural and interfacial studies on Zn1-xMgxSySe1-y/ZnSe buffer layer/GaAs heterostructures

Li-Hsin Kuo; Lourdes Salamanca-Riba; Bor-Jen Wu; Jim M. DePuydt; S. Guha; Greg Meis Haugen

doi:10.1117/12.179652

13 July 1994 Structural and interfacial studies on Zn_1-xMg_xS_ySe_1-y/ZnSe buffer layer/GaAs heterostructures

Li-Hsin Kuo; Lourdes Salamanca-Riba; Bor-Jen Wu; Jim M. DePuydt; S. Guha; Greg Meis Haugen;

Author Affiliations +

Proceedings Volume 2228, Producibility of II-VI Materials and Devices; (1994) https://doi.org/10.1117/12.179652
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

(100) composition modulation as well as (101) and (101) tweed strain contrast were observed in Zn_1-xMg_xS_ySe_1-y epitaxial films grown on ZnSe buffer layers. Surface buckling of the TEM plan-view specimens along the (110) direction is induced by the modulated structure in the Zn_1-xMg_xS_ySe_1-y films. High quality Zn_1-xMg_xS_ySe_1-y films were obtained by growing a ZnSe buffer layer on As-stabilized GaAs substrates with Zn treatment of the substrate prior to the growth of the film. In these samples, no vacancy-contained Ga₂Se₃ interfacial layer was found at the ZnSe/GaAs interface. Samples with rough ZnSe/GaAs interfaces contained a high density of Frank partial dislocations originating at the ZnSe/GaAs interface. The interface roughness is believed to result from an As-rich GaAs surface after the oxide desorption.

Citation Download Citation

Li-Hsin Kuo, Lourdes Salamanca-Riba, Bor-Jen Wu, Jim M. DePuydt, S. Guha, Greg Meis Haugen, "Structural and interfacial studies on Zn_1-xMg_xS_ySe_1-y/ZnSe buffer layer/GaAs heterostructures", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179652; https://doi.org/10.1117/12.179652

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