13 July 1994 Substrate-quality ternary III-V single crystals for II-VI device applications: growth and characterization
Author Affiliations +
We report the liquid encapsulated Czochralski growth and characterization of large, substrate quality single crystal Ga1-xInxAs, 0 < x < 0.10, in excess of 50 millimeters in diameter and weighing 1000 grams. This unique ability to grow large single crystals of ternary III-V compound semiconductors permits realization of the concept of substrate engineering for both homo- and heteroepitaxial applications. One area of particular interest and importance is the development of short visible wavelength (blue) lasers. Wafers with x equals 0.038 have been used for lattice matched MBE growth of ZnSe and ZnCdSe epilayers for blue emitter applications. Low temperature photoluminescence, WDX and double crystal x-ray diffraction (rocking curve) measurements have been utilized to confirm compositional uniformity and crystal quality. Characterization results for both substrate and epitaxial layer are discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William A. Bonner, William A. Bonner, Brian Lent, Brian Lent, Donald J. Freschi, Donald J. Freschi, W. Hoke, W. Hoke, } "Substrate-quality ternary III-V single crystals for II-VI device applications: growth and characterization", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179681; https://doi.org/10.1117/12.179681

Back to Top