13 July 1994 Substrate-quality ternary III-V single crystals for II-VI device applications: growth and characterization
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Abstract
We report the liquid encapsulated Czochralski growth and characterization of large, substrate quality single crystal Ga1-xInxAs, 0 < x < 0.10, in excess of 50 millimeters in diameter and weighing 1000 grams. This unique ability to grow large single crystals of ternary III-V compound semiconductors permits realization of the concept of substrate engineering for both homo- and heteroepitaxial applications. One area of particular interest and importance is the development of short visible wavelength (blue) lasers. Wafers with x equals 0.038 have been used for lattice matched MBE growth of ZnSe and ZnCdSe epilayers for blue emitter applications. Low temperature photoluminescence, WDX and double crystal x-ray diffraction (rocking curve) measurements have been utilized to confirm compositional uniformity and crystal quality. Characterization results for both substrate and epitaxial layer are discussed.
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William A. Bonner, William A. Bonner, Brian Lent, Brian Lent, Donald J. Freschi, Donald J. Freschi, W. Hoke, W. Hoke, } "Substrate-quality ternary III-V single crystals for II-VI device applications: growth and characterization", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179681; https://doi.org/10.1117/12.179681
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