13 July 1994 Transmission electrom microscopy (TEM) defect studies of molecular beam epitaxy (MBE) grown ZnSxSe1-x/GaAs interface
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Abstract
Both Shockley and Frank partial dislocations originating at the ZnSxSe1-x/GaAs interface were observed with defect densities in the range less than 5 X 104/cm2 to approximately 1 X 108/cm2 for samples grown under different conditions. These faulted defects act as heterogeneous nucleation sites for the generation of 60 degree(s) misfit dislocations. A very low density of Shockley partial dislocations was obtained in ZnSxSe1-x films grown by the layer-by-layer mode on GaAs substrates. Also, the density of Frank partial dislocations was decreased by exposing the As- stabilized GaAs surface to Zn for 1-2 minutes prior to the growth of the ZnSxSe1-x epilayers. These samples contained a defect density lower than 5 X 104/cm2. A Ga2Se3 compound existing at the ZnSxSe1-x/GaAs interface is thought to be the source of the Frank partial dislocations.
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Li-Hsin Kuo, Li-Hsin Kuo, Lourdes Salamanca-Riba, Lourdes Salamanca-Riba, G. E. Hofler, G. E. Hofler, Bor-Jen Wu, Bor-Jen Wu, Michael A. Haase, Michael A. Haase, } "Transmission electrom microscopy (TEM) defect studies of molecular beam epitaxy (MBE) grown ZnSxSe1-x/GaAs interface", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179653; https://doi.org/10.1117/12.179653
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