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13 July 1994 Ultrafast molecular beam epitaxy (MBE) CdTe photoconductor array for synchrotron radiation
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Abstract
MBE (molecular beam epitaxy) grown CdTe layers were processed to fabricate a photoconductor array for the diagnosis of short x-ray pulses from synchrotron radiation sources. The MBE (111)B CdTe layers were grown on (100)Si substrates. Photoconductor arrays were fabricated with gaps of 5 - 50 micrometers using conventional photolithography. Electroless Au or sputtered Au/Ni was used as a contact metal. The temporal response of the resulting CdTe photoconductor was measured with mode-locked 100 fsec Ti:Sapphire laser pulses. The FWHM of single crystalline CdTe photoconductor response pulse is as short as 37 psec with a 20 psec risetime. The photoconductor responds linearly to the x-ray tube photon flux with fixed accelerating voltage up to 40 kV. A significant response increase to the x-ray beam is observed for a layer with good crystalline quality. Spatial response of the CdTe photoconductor array was measured using rotating anode and synchrotron x rays for different beam sizes. Excellent spatial resolution was obtained from narrow angular radiation synchrotron x rays. The CdTe photoconductor was exposed to synchrotron x rays for 60 hours without any noticeable degradation.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sung-Shik Yoo, Brian G. Rodricks, Sivalingam Sivananthan, Jean-Pierre Faurie, and Pedro A. Montano "Ultrafast molecular beam epitaxy (MBE) CdTe photoconductor array for synchrotron radiation", Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); https://doi.org/10.1117/12.179661
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