1 March 1994 Reflective mode spatial light modulators in bulk III-V semiconductors
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Foster-Miller is developing a new family of SLM devices, based on the Franz-Keldysh (FK) effect in bulk III-V semiconductors, for several applications in optical signal processing and switching. Spatial light modulators constructed using the FK effect offer contrast ratios and switching energies rivalling state-of-the-art devices. However, our devices require typically only 2 or 3 bulk epilayers (available commercially), significantly reducing the materials and fabrication cost. Using the FK effect in an asymmetric Fabry-Perot geometry, we demonstrate high contrast (120:1 best, 50:1 typical) with drive voltages roughly 10 - 20 V and 2 - 3 nm optical bandwidth. We demonstrate high-contrast reflection mode optical modulation at a number of wavelengths in the 800 - 950 nm band.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Badri N. Gomatam, Badri N. Gomatam, Linas Jauniskis, Linas Jauniskis, Parviz P. Tayebati, Parviz P. Tayebati, Lawrence H. Domash, Lawrence H. Domash, } "Reflective mode spatial light modulators in bulk III-V semiconductors", Proc. SPIE 2237, Optical Pattern Recognition V, (1 March 1994); doi: 10.1117/12.169451; https://doi.org/10.1117/12.169451

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