Reflective mode spatial light modulators in bulk III-V semiconductors

Badri N. Gomatam; Linas Jauniskis; Parviz P. Tayebati; Lawrence H. Domash

doi:10.1117/12.169451

1 March 1994 Reflective mode spatial light modulators in bulk III-V semiconductors

Badri N. Gomatam; Linas Jauniskis; Parviz P. Tayebati; Lawrence H. Domash

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Proceedings Volume 2237, Optical Pattern Recognition V; (1994) https://doi.org/10.1117/12.169451
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

Foster-Miller is developing a new family of SLM devices, based on the Franz-Keldysh (FK) effect in bulk III-V semiconductors, for several applications in optical signal processing and switching. Spatial light modulators constructed using the FK effect offer contrast ratios and switching energies rivalling state-of-the-art devices. However, our devices require typically only 2 or 3 bulk epilayers (available commercially), significantly reducing the materials and fabrication cost. Using the FK effect in an asymmetric Fabry-Perot geometry, we demonstrate high contrast (120:1 best, 50:1 typical) with drive voltages roughly 10 - 20 V and 2 - 3 nm optical bandwidth. We demonstrate high-contrast reflection mode optical modulation at a number of wavelengths in the 800 - 950 nm band.

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Badri N. Gomatam, Badri N. Gomatam, Linas Jauniskis, Linas Jauniskis, Parviz P. Tayebati, Parviz P. Tayebati, Lawrence H. Domash, Lawrence H. Domash, } "Reflective mode spatial light modulators in bulk III-V semiconductors", Proc. SPIE 2237, Optical Pattern Recognition V, (1 March 1994); doi: 10.1117/12.169451; https://doi.org/10.1117/12.169451

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