4 November 1994 Laser reactive ablation deposition of titanium nitride and titanium carbide films
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Proceedings Volume 2246, Laser Materials Processing and Machining; (1994) https://doi.org/10.1117/12.193108
Event: Optics for Productivity in Manufacturing, 1994, Frankfurt, Germany
Abstract
Titanium nitride and titanium carbide films were deposited on silicon substrates by XeCl excimer laser reactive ablation of titanium in nitrogen and methane atmospheres, respectively. A series of 10,000 pulses at the fluence of approximately 5 J/cm2 and repetition rate of 10 Hz were directed to the target. The pressure in the chamber was fixed, during every irradiation series, at a given value within the range 6 X 10-4 - 10 mbar of N2 or CH4. Very flat films with thickness exceeding 1 micrometers were deposited. The structural characteristics of the deposited films were investigated by Rutherford backscattering spectrometry, scanning electron microscopy, and by x-ray diffraction. Under specific experimental conditions very pure nitride films were deposited.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emilia D'Anna, Emilia D'Anna, Gilberto Leggieri, Gilberto Leggieri, Armando Luches, Armando Luches, Maurizio Martino, Maurizio Martino, Alessio Perrone, Alessio Perrone, Guiseppe Majni, Guiseppe Majni, Paolo Mengucci, Paolo Mengucci, Ion N. Mihailescu, Ion N. Mihailescu, } "Laser reactive ablation deposition of titanium nitride and titanium carbide films", Proc. SPIE 2246, Laser Materials Processing and Machining, (4 November 1994); doi: 10.1117/12.193108; https://doi.org/10.1117/12.193108
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