Paper
6 August 1980 Hybrid Focal-Plane Array Development
David H. Alexander
Author Affiliations +
Proceedings Volume 0225, Infrared Image Sensor Technology; (1980) https://doi.org/10.1117/12.958696
Event: 1980 Technical Symposium East, 1980, Washington, D.C., United States
Abstract
Hybrid focal plane arrays for infrared detection have progressed rapidly over the past seven years from the point of proof of feasibility to demonstration of imagery. Hybrid arrays generally use two different semiconductor materials; an infrared detection material such as HgCdTe or InSb, and a silicon substrate chip which performs initial signal processing on the detector signal. Hybrid arrays have also been fabricated using extrinsic silicon detectors on a silicon substrate (SOX). A third important element in hybrid arrays is the interconnect technology used to electrically connect the detectors with the silicon substrate chip. Mechanical and thermal interaction of the two materials must be considered as well as the electrical. Hybrid arrays fabricated with InSb and HgCdTe detectors have demonstrated nearly BLIP operation. This paper will discuss some hybrid chips that have been developed and future trends in hybrid arrays.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David H. Alexander "Hybrid Focal-Plane Array Development", Proc. SPIE 0225, Infrared Image Sensor Technology, (6 August 1980); https://doi.org/10.1117/12.958696
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Cited by 3 scholarly publications.
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KEYWORDS
Sensors

Staring arrays

Signal processing

Indium

Charge-coupled devices

CCD image sensors

Signal detection

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