1 January 1994 Fourier transform infrared spectroscopy as a process monitor for integrated circuit manufacturing
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Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 22500R (1994) https://doi.org/10.1117/12.2303044
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
A Fourier transform infrared (FF-IR) spectrometer was successfully employed to monitor in real-time the fabrication of thin film integrated circuits. The instrument simultaneously measured film thickness and doping levels of cpitaxial silicon films.. The FT-IR was optically interfaced to a modular single wafer processor capable of rapid thermal processing and chemical vapor deposition. The data acquisition and analysis were performed within seconds, and demonstrated improved sensitivity and accuracy compared to present measurement methods. Besides epitaxial silicon, this technique can be applied to the production of silicon oxide, silicon nitride, poly-crystalline silicon and silicon shallow junctions. Details of the instrument interface, collected spectra, computer analysis software and process control strategies will be given.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. D. Akhsakhaljan, A. D. Akhsakhaljan, } "Fourier transform infrared spectroscopy as a process monitor for integrated circuit manufacturing", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22500R (1 January 1994); doi: 10.1117/12.2303044; https://doi.org/10.1117/12.2303044
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