1 January 1994 Thermal emission versus luminescence for IR emitting diodes
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Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 22506F (1994) https://doi.org/10.1117/12.2303248
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
Fundamental limitation on interband luminescence's quantum efficiency value in narrow gap semiconductors prevent practical use of orthodox light emitting diodes for optical processing in IR (5-25 µm). Use of thermal emission resulting from intraband transitions in wide gap semiconductors seems to be alternative approach to decide the problem. Pros and cons of the proposal supported by theoretical calculations and experimental study are being discussed in details. Subject areas: Submillimeter and Infrared Devices and Technology
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. K. Malyutenko, V. K. Malyutenko, } "Thermal emission versus luminescence for IR emitting diodes", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22506F (1 January 1994); doi: 10.1117/12.2303248; https://doi.org/10.1117/12.2303248
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