1 January 1994 Electro-optic power control of a millimeter wave Gaussian beam
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Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 22506M (1994) https://doi.org/10.1117/12.2303255
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
The use of a molecular beam epitaxy (MBE) engineered1H-V semiconductor to electro-optically modulate a mil- limeter wave gaussian beam is presented. A dynamic range of more than 10 dB and an insertion loss of less that 0.5 dB has been achieved at 100 GHz.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guillermo F. Delgado, Guillermo F. Delgado, } "Electro-optic power control of a millimeter wave Gaussian beam", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22506M (1 January 1994); doi: 10.1117/12.2303255; https://doi.org/10.1117/12.2303255
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