1 January 1994 Low compensation impurity band photoconductors
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Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 225070 (1994) https://doi.org/10.1117/12.2303269
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
The present study of silicon based impurity band photoconductors evolves from the development of a space borne instrument for spectroscopy of the atmosphere using far infrared thermal emission of relevant molecular species1 in the spectral range 80 to 400 cm-1. Actually, the spectral range from 200 to 400 cm-1 in which, for example, the key N205 molecule has a strong signature, is not well covered by the standard available Beryllium doped Germanium (Ge:Be) photoconductors which suffer from poor quantum efficiency in this region.. They are also quite sensitive to cosmic ray particles due to their large volume. In addition, only a few different materials are available because of the difficult crystal growth process.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Pasquier, S. Pasquier, } "Low compensation impurity band photoconductors", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 225070 (1 January 1994); doi: 10.1117/12.2303269; https://doi.org/10.1117/12.2303269
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