1 January 1994 Improved conductivity-measurement of semiconductor epitaxial layers by means of the contactless microwave method
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Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 225072 (1994) https://doi.org/10.1117/12.2303271
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
Measurements and calculations of the scattering-characteristics of stratified lossy dielectric blocks completely filling a waveguide cross section are presented. The method is used for contactless con- ductivity measurements of MBE-grown II-VI semiconductor layers.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Boege, P. Boege, } "Improved conductivity-measurement of semiconductor epitaxial layers by means of the contactless microwave method", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 225072 (1 January 1994); doi: 10.1117/12.2303271; https://doi.org/10.1117/12.2303271
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