1 January 1994 Nonlinear submillimeter and infrared absorption in semiconductors
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Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 225074 (1994) https://doi.org/10.1117/12.2303273
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
A theory of the nonlinear submillimeter and infrared absorption in semiconductors is devel- oped. The absorption is caused by the intraband transitions of holes. The theory allows to estimate the threshold intensities of the coherence and incoherence mechanisms of absorption saturation. The influence of weak electric (andjor magnetic) field and charged impurities is considered.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. R. Shabaev, "Nonlinear submillimeter and infrared absorption in semiconductors", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 225074 (1 January 1994); doi: 10.1117/12.2303273; https://doi.org/10.1117/12.2303273
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