30 November 2017 V-band monolithic integrated circuits for personal communication terminals
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Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 22507X (2017) https://doi.org/10.1117/12.2303302
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
A single-stage millimeter-wave high gain wide band MMIC amplifier and an MMIC oscillator at V-band have been successfully fabricated based on 0.15pm T-shaped gate GaAs based heterojunction FETs (HJFETs) technology. The single- stage amplifier exhibits 7.2±1.0dB of gain and 15.3dBm output power at 3dB compression point with a 49-61GHz range. The MMIC oscillator shows 51GHz oscillation with 2.5dBm of the output power.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Funabashi, M. Funabashi, } "V-band monolithic integrated circuits for personal communication terminals", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22507X (30 November 2017); doi: 10.1117/12.2303302; https://doi.org/10.1117/12.2303302
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