30 November 2017 GaInAs/InP composite channel HEMTs for millimeter wave power applications
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Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 22508G (2017) https://doi.org/10.1117/12.2303321
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
InP-based HEMTs with GaInAs channels have demonstrated great potential for millimeter wave power applications [1]. One of the major draw-back of InP-based HEMTs has been the low value of the drain-to-source breakdown voltage due to the low bandgap of the Ga0.471n0.53As channel. By using InP as the channel material it is possible to increase the bandgap of the channel and effectively the channel breakdown [2]. But due to the low mobility of InP and high sheet resistivity it is difficult to make an ohmic contact directly to the channel and the device can have a high access resistance and a high knee voltage in their I-V characteristics. By using a combination of a thin layer of GaInAs and InP as the channel material it is possible to use the advantages of both materials (high mobility of GaInAs at low fields, and high breakdown and saturation velocity of InP at high fields) [3,4]. Such a composite channel allows direct ohmic contact formation to the channel with a higher channel breakdown than an GaInAs channel but lower than an InP channel.
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Mehran Matloubian, Mehran Matloubian, } "GaInAs/InP composite channel HEMTs for millimeter wave power applications", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22508G (30 November 2017); doi: 10.1117/12.2303321; https://doi.org/10.1117/12.2303321
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