30 November 2017 MMICs using InP based hemts for high gain, low noise, low dc power consumption microwave and millimeter-wave systems
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Proceedings Volume 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994; 22508M (2017) https://doi.org/10.1117/12.2303327
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States
Abstract
This paper presents the development of various MMICs ranging from 1 to 100 GHz using 0.1 jim gate- length pseudomorphic AlInAsfinGaAs/InP HEMT technology. These InP-based HEMT MMICs have distinct advantages in high gain, low noise and low dc power consumption over the GaAs-based HEMT MMICs. The InP HEMT device characteristics, MMIC design and performance are discussed.
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Huei Wang, "MMICs using InP based hemts for high gain, low noise, low dc power consumption microwave and millimeter-wave systems", Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22508M (30 November 2017); doi: 10.1117/12.2303327; https://doi.org/10.1117/12.2303327
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